中文摘要
電阻式非揮發性八電晶體靜態隨機存取記憶體已經被提出用以減輕靜態功率、電源關閉時保留資料，且提供快速開機的速度。在本文中，我們定義數個針對非揮發性八電晶體靜態隨機存取記憶體的錯誤模型化，其中包含新的憶阻器相關錯誤模型。另外提出了一類行軍式測試演算法可涵蓋簡單的靜態隨機存取記憶體的錯誤與憶阻器相關的錯誤。在16kb之待測記憶體下，所提出的類行軍式測試演算法與現有的方法相比雖然需要25.9%的額外測試時間，但在這些探討的錯誤模型下可提供100%的測試涵蓋率。另外，我們亦提出類行軍式診斷測試，以區分非揮發性八電晶體靜態隨機存取記憶體中憶阻器相關的錯誤。
Abstract
Resistive nonvolatile-8T (Rnv8T) static random access memory (SRAM) has been proposed to alleviate static power and preserve data in power-down mode and provide fast power-on speed. In this paper, we define several faults for the Rnv8T SRAM including new memristor-related fault models. Also, a March-like test algorithm which can cover simple SRAM faults and defined memristor-related faults are proposed. Considering 16kb memory under test, the proposed March-like test needs 25.9% test time overhead as compare with existing test algorithm, but provides 100% fault coverage on the targeted faults. Furthermore, we also propose a March-like diagnosis test for distinguishing memristor-related faults of Rnv8T SRAMs.
關鍵詞(Key Words)
憶阻器 (Memristor)
非揮發性靜態隨機存取記憶體 (Nonvolatile SRAM)
錯誤模型化 (Fault model)
測試演算法 (Test algorithm)
行軍式測試 (March test)
相關檔案: 電阻式非揮發性8T SRAM之憶阻器相關錯誤模型化、測試與診斷(全文)
